Title of article
On an indium–tin-oxide thin film based ammonia gas sensor
Author/Authors
Lin، نويسنده , , Cheng-Wei and Chen، نويسنده , , Huey-Ing and Chen، نويسنده , , Tai-You and Huang، نويسنده , , Chien-Chang and Hsu، نويسنده , , Chi-Shiang and Liu، نويسنده , , Rong-Chau and Liu، نويسنده , , Wen-Chau، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
1481
To page
1484
Abstract
An ammonia sensor basing on the indium tin oxide (ITO) thin film on a quartz substrate which was fabricated by RF sputtering with substrate thermal treatment, is studied and demonstrated. From the experimental results, the good NH3 sensing performances including high response of 2312%, fast response and recovery times of 73 and 104 s upon the introduction of a 1000 ppm NH3/air gas at 150 °C are observed. In comparison, the proposed sensor is superior to other previously reported ITO thin film based ammonia sensors. Due to the advantages of simple structure, easy operation, low cost, and excellent performances, the studied device gives a promising use in high-performance ammonia sensor applications.
Keywords
Ito , Ammonia sensor , grain size , oxygen deficiency , RF sputtering
Journal title
Sensors and Actuators B: Chemical
Serial Year
2011
Journal title
Sensors and Actuators B: Chemical
Record number
1440032
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