Title of article
On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)
Author/Authors
Hsu، نويسنده , , Chi-Shiang and Chen، نويسنده , , Huey-Ing and Chang، نويسنده , , Chung-Fu and Chen، نويسنده , , Tai-You and Huang، نويسنده , , Chien-Chang and Chou، نويسنده , , Po-Cheng and Liu، نويسنده , , Wen-Chau، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
19
To page
23
Abstract
The interesting temperature-dependent hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET) are studied and demonstrated. Remarkable hydrogen sensing performance is found at a very low concentration of hydrogen gases (≤1 ppm H2/air). In addition, a good transistor switching behavior with the high drain current on/off value of 93,680 is obtained for 1% ppm H2/air gas at 523 K. The fast transient response as comparable with a Schottky-type hydrogen sensor is also observed. Based on these advantages, the studied device shows a promise for high-performance, high-temperature electronics, and micro electro-mechanical system (MEMS) applications.
Keywords
Hydrogen sensor , transient response , Pd/AlGaN/GaN , HFET
Journal title
Sensors and Actuators B: Chemical
Serial Year
2012
Journal title
Sensors and Actuators B: Chemical
Record number
1440484
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