Title of article
Degradation of the diode ideality factor of silicon n–p junctions
Author/Authors
El-Tahchi، نويسنده , , Mario El-Khoury، نويسنده , , Antonio and De Labardonnie، نويسنده , , Marc and Mialhe، نويسنده , , Pierre and Pelanchon، نويسنده , , Frédéric، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
393
To page
398
Abstract
An investigation of the effects of bulk and interface degradation processes on the junction ideality factor is presented. The ideality factor is extracted from a description of the simulated current–voltage characteristics of the junction, using a double exponential model. The junction ideality factor appears as a sensitive parameter appropriate to characterize the effect of recombination losses and to quantify the magnitude of junction devices degradation.
Keywords
Degradation , junction , Ideality factor
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2000
Journal title
Solar Energy Materials and Solar Cells
Record number
1476489
Link To Document