Growth of InGaN and GaN films by photo-assisted metalorganic chemical vapor deposition

Nitride semiconductors are of interest for blue light-emitting devices. Because of the large difference in vapor pressures between indium and nitrogen, the growth of InGaN by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) has been problematic. We used triethylgallium (TEGa), trimethylindium (TMIn), and ammonia (NH3) as precursors of gallium, indium and nitrogen, respectively, for the growth of InxGa1−xN (x=0, 1, and 0.2) films on sapphire substrate by photo-assisted MOCVD. GaN and InGaN growth was achieved at substrate temperatures of 650°C and ∼700°C, respectively. The structure of the films was characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM).