Title of article
Porous silicon as an intermediate layer for thin-film solar cell
Author/Authors
Bilyalov، نويسنده , , R and Stalmans، نويسنده , , L and Beaucarne، نويسنده , , G and Loo، نويسنده , , R and Caymax، نويسنده , , M and Poortmans، نويسنده , , J and Nijs، نويسنده , , J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
9
From page
477
To page
485
Abstract
The potential of porous silicon (PS) with dual porosity structure as an intermediate layer for ultra-thin film solar cells is described. It is shown that a double-layered PS with a porosity of 2060% allows to grow epitaxial Si film at medium temperature (725°–800°C) and at the same time serves as a gettering/diffusion barrier for impurities from potentially contaminated low-cost substrate. A 3.5 μm thin-film cell with reasonable efficiency is realized using such a PS intermediate layer.
Keywords
Porous silicon , Thin films , Si solar cells
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476876
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