Title of article
Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell
Author/Authors
Nishida، نويسنده , , Shoji and Nakagawa، نويسنده , , Katsumi and Iwane، نويسنده , , Masaaki and Iwasaki، نويسنده , , Yukiko and Ukiyo، نويسنده , , Noritaka and Mizutani، نويسنده , , Masaki and Shoji، نويسنده , , Tatsumi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
8
From page
525
To page
532
Abstract
We have developed a new apparatus for the growth of liquid-phase epitaxy (LPE)-Si films on 5 in Si wafers. We have obtained high growth rates of 0.1–1.0 μm/min and minority-carrier lifetime of average value of 10 μs over the whole of wafer, whereas the thickness uniformity was degraded when rotating the wafers in the solvent. We also demonstrated to growth of LPE-Si films on porous Si layers and to separate the Si films from the porous layers. A 9.5% cell was obtained using a LPE-Si film after separation.
Keywords
Liquid-phase epitaxy , Porous Si , Separation of Si film , Thin-film crystalline Si
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1476901
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