Microcrystalline Si films deposited from dichlorosilane using RF-PECVD

Microcrystalline silicon has been fabricated using a conventional RF-PECVD method with a dichlorosilane/hydrogen mixture. Better crystallinity, lower hydrogen content and different preferential orientation have been obtained in comparison to those from a silane–hydrogen mixture. It was also found that a small addition of silane to dichlorosilane markedly deteriorates the crystallinity. These differences are discussed in terms of the surface reaction during the growth.