Title of article
ZnO:Ga conducting-films grown by DC arc-discharge ionplating
Author/Authors
Hirasawa، نويسنده , , Hiroshi Katayama-Yoshida، نويسنده , , Makoto and Nakamura، نويسنده , , Susumu and Suzuki، نويسنده , , Yoshio C. Okada، نويسنده , , Satoshi and Kondo، نويسنده , , Ken-ichi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
231
To page
236
Abstract
For the first time, DC arc-discharge ionplating was used to grow low-resistivity ZnO:Ga conducting-films at high deposition rate. Low-resistivity ZnO:Ga conducting films were grown at a rate of over 100 Å/s by using DC arc-discharge ionplating at a discharge current of 150 A. The resistivity of this film was about 2×10−4 Ω cm. The lowest film resistivity, 1.6×10−4Ω cm, was obtained on an inexpensive soda lime glass substrate at 350°C in which the Ga content was about 4at%.
Keywords
ZnO:Ga2O3 , Ionplating , DC arc-discharge , Growth rate , resistivity
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477299
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