Title of article
Radiation-resistant solar cells for space use
Author/Authors
Yamaguchi، نويسنده , , Masafumi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
23
From page
31
To page
53
Abstract
This paper reviews the present status of radiation-resistant solar cells made with Si, GaAs, InP and InGaP/GaAs for space use. At first, properties of radiation-induced defects in semiconductor materials and solar cells are described based on an anomalous degradation of Si space solar cells under high-energy, high-fluence electron and proton irradiations. Advantages of direct bandgap materials as radiation-resistant space cells are presented. Unique properties of InP as radiation-resistant cells have also been found. A world-record efficiency of 26.9% (AM0) has been obtained for an InGaP/GaAs tandem solar cell. Radiation-resistance of the InGaP/GaAs tandem cells is described.
Keywords
InP. InGaP/GaAs tandem , GaAs , solar cell , Defects , SI , radiation
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477423
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