The study on high efficient AlxGa1−xAs/GaAs solar cells

The investigation of AlxGa1−xAs/GaAs solar cells is carried out by means of both metalorganic chemical vapor deposition (MOCVD) and liquid-phase epitaxial (LPE) technique. The measurements of illuminated I–V characteristics, dark I–V characteristics and quantum efficiencies were performed for the GaAs solar cells made in authorʹs laboratory. The measuring results revealed that the quality of materials in GaAs solar cellʹs structures is the key factor for getting high-efficient GaAs solar cells, but the effect of post-growth technology on the performances of GaAs solar cells is also very strong. The 21.95% (AM0, 2×27 cm2, 25°C) high conversion efficiency in a typical GaAs solar cell has been achieved owing to improving the quality of materials as well as optimizing the post-growth technology of devices.