Title of article
Deep levels in p- and n-type InGaAsN for high-efficiency multi-junction III–V solar cells
Author/Authors
Mary E. Kaplar، نويسنده , , R.J. and Kwon، نويسنده , , D. and Ringel، نويسنده , , S.A. and Allerman، نويسنده , , A.A. and Kurtz، نويسنده , , Steven R. and Jones، نويسنده , , E.D. and Sieg، نويسنده , , R.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
85
To page
91
Abstract
DLTS measurements have been performed on InGaAsN. Four hole traps have been identified in 1.05 eV, p-type InGaAsN and the removal of a midgap trap (∼0.5 eV) during annealing has been correlated with improved bulk material properties. Improvements in MOCVD growth conditions resulted in a reduction of trap density in 1.05 eV, p-type InGaAsN. Increased indium and nitrogen composition has been correlated with higher defect concentrations in p-type InGaAsN. Two electron traps have been identified in 1.15 eV, n-type InGaAsN and annealing was found to reduce the density of the shallow electron trap.
Keywords
InGaAsN , gainnas , MOCVD , DLTS , Multi-junction solar cells
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477496
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