Title of article
Light and voltage dependence of the junction transport properties of CdTe/CdS photovoltaics
Author/Authors
V.P. and Linam، نويسنده , , D.L. and Singh، نويسنده , , V.P. and McClure، نويسنده , , J.C. and Lush، نويسنده , , G.B. and Mathew، نويسنده , , X. and Sebastian، نويسنده , , P.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
10
From page
335
To page
344
Abstract
The J–V curve of CdTe/CdS photovoltaics does not consist of a simple superposition of a loss current and a light generated current with a considerable loss in conversion efficiency. This paper uses capacitance/voltage measurements and J–V measurements at a variety of temperatures and light levels to develop a model for this non-superposition. It was found that a light dependent tunneling mechanism dominates at low voltages. Moreover, the tunneling takes place from a trap level within the CdTe.
Keywords
Photovoltaics , Junctions , Thin films , Cadmium telluride , solar cells , CdTe
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2001
Journal title
Solar Energy Materials and Solar Cells
Record number
1477657
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