Title of article
In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells
Author/Authors
Masuda، نويسنده , , Atsushi and Ishibashi، نويسنده , , Yoriko and Uchida، نويسنده , , Kenji and Kamesaki، نويسنده , , Koji and Izumi، نويسنده , , Akira and Matsumura، نويسنده , , Hideki، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
373
To page
377
Abstract
Effects of the chamber cleaning on properties of hydrogenated amorphous Si films prepared by catalytic chemical vapor deposition are shown. It is also revealed that the chamber is easily cleaned by atomic H generated on the heated catalyzer from H2 gas molecules. In situ chamber cleaning using only H2 gas is applicable to in-line apparatuses for mass production of solar cells, which brings about the reduction of the production cost.
Keywords
Hydrogenated amorphous silicon , solar cells , Atomic hydrogen , Mass-production apparatus , Catalytic chemical vapor deposition , hot-wire chemical vapor deposition , Chamber cleaning
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2002
Journal title
Solar Energy Materials and Solar Cells
Record number
1478229
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