Title of article
Effect of Cl ion implantation on electrical properties of CuInSe2 thin films
Author/Authors
Tanaka، نويسنده , , Tooru and Yamaguchi، نويسنده , , Toshiyuki and Ohshima، نويسنده , , Takeshi and Itoh، نويسنده , , Hisayoshi and Wakahara، نويسنده , , Akihiro and Yoshida، نويسنده , , Akira، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
109
To page
113
Abstract
The effects of Cl ion implantation on the properties of CuInSe2 epitaxial thin films have been investigated. Using five kinds of accelerating energies, the doped layer with a constant profile of Cl concentration along the depth direction was fabricated. From the results of reflection of high-energy electron diffraction, the damages due to implantation were removed by annealing at 400°C in N2. The conductivity type in all implanted films was n-type, and the carrier concentration was increased with increasing Cl concentration in the thin films. Consequently, it is considered that Cl acts as a donor in CuInSe2.
Keywords
Thin film , CUINSE2 , Cl doping , Ion implantation , solar cell
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2003
Journal title
Solar Energy Materials and Solar Cells
Record number
1478332
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