Title of article
Preparation of CuIn1−xGaxSe2 thin films by sputtering and selenization process
Author/Authors
Song، نويسنده , , Ho Keun and Kim، نويسنده , , Soo Gil and Kim، نويسنده , , Hyeong Joon and Kim، نويسنده , , Suk Ki and Kang، نويسنده , , Ki Wan and Lee، نويسنده , , Jung Chul and Yoon، نويسنده , , Kyung Hoon، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
9
From page
145
To page
153
Abstract
CuIn1−xGaxSe2 polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu–Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu–In–Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150°C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn1−xGaxSe2 films had a smooth surface morphology and a single chalcopyrite phase.
Keywords
CuIn1?xGaxSe2 , Two-step method , DC magnetron sputtering , Selenization
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2003
Journal title
Solar Energy Materials and Solar Cells
Record number
1478348
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