Synthesis and interlayer modification of RbLaTa2O7

A layered semiconductor, lanthanum tantalum oxide was prepared by solid reaction at high temperature, and the processes for the modification of the interlayers by protonation, intercalation and pillaring were investigated. n-Butylamine could easily be intercalated into the interlayers of HLaTa2O7 to significantly enhance the interlayer distance, which facilitated the exchange of cation with n-butylamine. Finally, CdO pillars in the interlayer of lanthanum tantalum oxide were formed via calcinating at 500°C in air.