Title of article
Structure of PECVD Si:H films for solar cell applications
Author/Authors
Edelman، نويسنده , , F and Chack، نويسنده , , A and Weil، نويسنده , , R. Beserman، نويسنده , , Vadim Khait، نويسنده , , Yu.L and Werner، نويسنده , , P and Rech، نويسنده , , B and Roschek، نويسنده , , T and Carius، نويسنده , , R and Wagner، نويسنده , , H and Beyer، نويسنده , , W، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
19
From page
125
To page
143
Abstract
The structure of undoped SiːH films and solar cells deposited under different hydrogen concentration and substrate temperatures were studied. The characterization techniques used were XRD, Raman spectroscopy, TEM, optical absorption, and hydrogen effusion. The high concentration films were amorphous in the as-deposited state but crystallized upon annealing at 700°C. Middle and low concentration films were nanocrystalline (nc) and remained nc up to 800°C annealing. A theoretical explanation is given for the stability of these films. Such films, on glass substrates, had optical absorption spectra close to those of amorphous material. The solar cell samples, showed some nc morphology in all-concentration states.
Keywords
stability , structure , Microcrystalline , Silicon
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2003
Journal title
Solar Energy Materials and Solar Cells
Record number
1478716
Link To Document