Title of article
Low-temperature preparation of boron-doped nanocrystalline SiC:H films using mercury-sensitized photo-CVD technique
Author/Authors
Myong ، نويسنده , , Seung Yeop and Kim، نويسنده , , Tae Hun and Lim، نويسنده , , Koeng Su and Kim، نويسنده , , Ki Hwan and Ahn، نويسنده , , Byung Tae and Miyajima، نويسنده , , Shinsuke and Konagai، نويسنده , , Makoto، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
9
From page
485
To page
493
Abstract
We investigated the dependence of hydrogenated boron-doped nanocrystalline silicon-carbide (p-nc-SiC:H) film characteristics against the substrate temperature (Tsub) by the transmission electron micrograph, Raman spectrum, and dark conductivity measurements. High quality of nanocrystalline growth at the low temperature of 120°C shows that the mercury-sensitized photo-assisted chemical vapor deposition (photo-CVD) technique is promising for a low-temperature fabrication of thin film solar cells onto flexible plastic substrates.
Keywords
Photo-CVD , p-nc-SiC:H , Hydrogen dilution , solar cell , low temperature
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2004
Journal title
Solar Energy Materials and Solar Cells
Record number
1479141
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