Radiometric pulse and thermal imaging methods for the detection of physical defects in solar cells and Si wafers in a production environment

Steady-state infrared imaging and time-dependent radiometric pulse methods were used to identify certain characteristics and defects of silicon wafers, solar cells and photovoltaic solar modules. The application of the no contact, time-dependent radiometric pulse method has been demonstrated for the detection of cracked or fractured solar cells and its potential for the detection of wafer or cell thickness variation identified. The sensitivity of this method to thermophysical variations shows promise also for the detection of electrically poor bonds.