Title of article
On the growth and doping of Fe/Ti chalcogenide thin films
Author/Authors
Pascual، نويسنده , , A. and Diaz-Chao، نويسنده , , P. and Ferrer، نويسنده , , I.J. and Sلnchez، نويسنده , , N. C. Bobillo-Ares، نويسنده , , J.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
8
From page
575
To page
582
Abstract
Formation of pyrite (FeS2) thin films by sulphuration of metallic layers (Fe) and bilayers (Fe–Ti) has been investigated. An experimental technique, which allows the measurement of both the electrical resistance (R) and the thermoelectric coefficient (S) of the films during the sulphuration process (in situ), has been used. Sulphurated Fe–Ti bilayers appear to be n-type semiconductors in contrast with sulphurated Fe films, which are always p-type semiconductors. The change of conductivity type has been attributed to the doping effect of FeS2 films by Ti.
Keywords
Thin films , Metallic chalcogenide , Doping
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2005
Journal title
Solar Energy Materials and Solar Cells
Record number
1479821
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