Title of article
Photoelectrochemical cells based on CdSe films brush plated on high-temperature substrates
Author/Authors
Murali، نويسنده , , K.R. and Austine، نويسنده , , A. and Jayasutha، نويسنده , , B. K. Trivedi، نويسنده , , D.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
7
From page
753
To page
759
Abstract
CdSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 °C from the precursors. The films exhibited hexagonal crystal structure. Optical band gap of 1.65 eV was obtained. XPS measurements indicated the formation of CdSe. Capacitance–voltage measurements indicated the films to exhibit n-type behaviour. A carrier density of 1017 cm−3 was obtained. Photoelectrochemical cells have exhibited higher efficiency compared to earlier reports on brush-plated films. Spectral response measurements indicated a peak quantum efficiency of 75% at 1.65 eV.
Keywords
Cdse , Brush plating , Thin films , photoelectrochemistry
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2006
Journal title
Solar Energy Materials and Solar Cells
Record number
1480229
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