XPS study of amorphous carbon nitride (a-C:N) thin films deposited by reactive RF sputtering

Amorphous carbon nitride (a-C:N) thin films were deposited by reactive radiofrequency (RF) sputtering. The a-C:N films were deposited, at room temperature, onto silicon substrates, from a graphite target of very high purity, in an atmosphere of pure nitrogen. The chemical properties of these films were studied by X-ray photoelectron spectroscopy (XPS). The XPS spectra of the a-C:N films reveal that nitrogen is well incorporated in the amorphous carbon network. The atomic percentage of nitrogen in the a-C:N films, calculated from the XPS spectrum, is about 32%. In addition to C–C and CC bonds, the analysis of the chemical shifts of C 1 s and N 1 s core level peaks show that nitrogen is bonded to carbon in CN double bonding and CN triple bonding configurations. The content of the CN triple bonds is found to be more important than the CN double bonds.