• Title of article

    Fluctuation model for p–n heterojunction solar cells

  • Author/Authors

    Dmitruk، نويسنده , , N.L and Borkovskaya، نويسنده , , O.Yu. and Mamontova، نويسنده , , I.B. and Basiuk، نويسنده , , E.V. and Saniger Blesa، نويسنده , , J.M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    5
  • From page
    2496
  • To page
    2500
  • Abstract
    Influence of the roughness (microrelief) of an active interface in p–n junction solar cells (SC) on the photovoltage (the open-circuit voltage Voc) has been studied. Nonuniformity of contact potential difference between p- and n-regions leads to barrier height fluctuation that are exponentially enhanced when dealing with barrier current. This results in some decrease of the Voc value. Three theoretical models of averaging open-circuit voltage were used. Experimental results on p+-AlxGa1−xAs/p+-n-GaAs heterostructure SC with various microrelief, obtained by the anisotropic chemical etching, are compared with theoretical calculations.
  • Keywords
    Heterojunction solar cells , Fluctuation model , Microrelief interface , Anisotropic etching
  • Journal title
    Solar Energy Materials and Solar Cells
  • Serial Year
    2006
  • Journal title
    Solar Energy Materials and Solar Cells
  • Record number

    1480647