Semiconducting properties of the anodic films grown over PbIn alloy electrodes

Semiconducting properties of oxide film grown over PbIn binary alloy electrodes in alkaline medium is elucidated. It has been observed that anodic film formed over Pb0.3 wt%In alloy in the potential range of −0.75 to 1.25 V (vs. Hg/HgO) shows better short circuit photocurrent density (3.2 mA/cm2) than the oxide film over pure Pb electrode (2.2 mA/cm2). The observed photoactivity is correlated with the interfacial parameters of the nonstoichiometric oxide–electrolyte interface using Gartner Butler model. Effect of varying concentration of In dopant in the PbO matrix on the interfacial properties is reported. It is shown that combined effect of space charge width and diffusion length of the minority carriers can describe the observed photoactivity efficiently.