Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon

Hydrogenation by plasma is a low cost and efficient method to improve the photovoltaic properties of multicrystalline silicon. The role of plasma parameters on the efficiency of hydrogenation was studied using secondary ion mass spectrometry (SIMS), hydrogen effusion, electrochemical impedance spectroscopy and electron beam induced current (EBIC). The experimental results showed a deuterium concentration of 1020 atoms cm−3 could be reached in the sample after a 15-min treatment. Optimal treatment time depends on temperature and leads to maximum electrical conductivity and minority carrier diffusion length. The results confirm the reduction of defects densities and potential barriers associated with grain boundaries.