Analytical modelling and minority current measurements for the determination of the emitter surface recombination velocity in silicon solar cells

A new analytical model is used to describe the emitter of silicon solar cells in order to gain information on the surface recombination velocity S. The procedure takes advantage of the combined use of experimental measurements, done to determine the emitter saturation current Joe, and analytical modelling to relate Joe to S. Several experiments have been carried out on silicon solar cells having different emitter profiles subjected to various surface treatments. The influence of the surface on significant cell parameters has been analysed.