Title of article
GISAXS study of temperature evolution in nanostructured CeVO4 films
Author/Authors
Turkovi?، نويسنده , , Aleksandra and Orel، نويسنده , , Bojan and Lu?i?-Lav?evi?، نويسنده , , Magdy and Dub?ek، نويسنده , , Pavo and Orel، نويسنده , , Zorica Crnjak and Bernstorff، نويسنده , , Sigrid، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
6
From page
1299
To page
1304
Abstract
Cerium vanadate films on glass substrate were obtained by sol–gel process. The morphology of these nanostructured and porous films was studied by grazing-incidence small-angle X-ray scattering (GISAXS) at synchrotron ELETTRA, Trieste, Italy. The aim of the GISAXS study was to investigate the changes in grain sizes due to the temperature evolution with three different time intervals (5, 15 and 30 min) of annealing at 673 K. We found that the effects of the different times of annealing are different for surface and bulk properties of this V/Ce oxide.
Keywords
GISAXS , Thin films , CeVO4 , Nanostructure
Journal title
Solar Energy Materials and Solar Cells
Serial Year
2007
Journal title
Solar Energy Materials and Solar Cells
Record number
1481415
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