Analytical and computer modelling of suns–Voc silicon solar cell characteristics

Theoretical modelling of suns–Voc characteristics of silicon solar cells in extreme conditions of surface recombination and illumination intensity predicts departures from the standard I–V characteristic curves. These departures result in ideality factors that can be either higher or lower than unity, depending on the conditions. Analytical proof of such non-idealities is also given in the paper, showing that they are due to the finite diffusivity of carriers towards the surfaces.