A compact quantum surface potential model for a MOSFET device

Quantum confinement effect near the silicon/silicon-oxide interface reduces the total channel charge, capacitance, current but it increases the surface potential of the MOSFET device due to thin gate dielectric (below 4 nm). The surface potential compact models with quantum effect are usually derived using a semiconductor band gap widening approach. In this paper we construct a compact surface potential model for the MOS structure directly from the Density Gradient (DG) equations.