Title of article
Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs
Author/Authors
Monga، نويسنده , , U. and Bّrli، نويسنده , , H. and Fjeldly، نويسنده , , T.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
7
From page
901
To page
907
Abstract
A precise two-dimensional subthreshold current and capacitance modeling of short-channel, nanoscale double-gate MOSFETs is presented. The model covers a wide range of geometries and material combinations. The subthreshold model is based on conformal mapping techniques. The results are in excellent agreement with numerical simulations.
Keywords
Nanoscale MOSFET , Device modeling , Current Modeling , Subthreshold slope , Capacitance modeling , conformal mapping
Journal title
Mathematical and Computer Modelling
Serial Year
2010
Journal title
Mathematical and Computer Modelling
Record number
1596897
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