Title of article
A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands
Author/Authors
Mascali، نويسنده , , Giovanni and Romano، نويسنده , , Vittorio، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
17
From page
213
To page
229
Abstract
This paper can be considered as the natural prosecution of Mascali and Romano (2009) [5]. Here, we describe the motion of holes in silicon by also taking into account the non-parabolicity of the heavy and light bands. The model is still based on the moment method and the closure of the system of equations is obtained by using the maximum entropy principle. Comparisons are made with the results in [5], in the case of bulk silicon, in order to establish the importance of non-parabolicity.
Keywords
Hydrodynamical models , Hole transport
Journal title
Mathematical and Computer Modelling
Serial Year
2011
Journal title
Mathematical and Computer Modelling
Record number
1597506
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