• Title of article

    A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands

  • Author/Authors

    Mascali، نويسنده , , Giovanni and Romano، نويسنده , , Vittorio، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    17
  • From page
    213
  • To page
    229
  • Abstract
    This paper can be considered as the natural prosecution of Mascali and Romano (2009) [5]. Here, we describe the motion of holes in silicon by also taking into account the non-parabolicity of the heavy and light bands. The model is still based on the moment method and the closure of the system of equations is obtained by using the maximum entropy principle. Comparisons are made with the results in [5], in the case of bulk silicon, in order to establish the importance of non-parabolicity.
  • Keywords
    Hydrodynamical models , Hole transport
  • Journal title
    Mathematical and Computer Modelling
  • Serial Year
    2011
  • Journal title
    Mathematical and Computer Modelling
  • Record number

    1597506