Title of article
A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering
Author/Authors
Daghighi، Arash نويسنده Assistant Professor, Faculty of Engineering, Shahrekord University, Shahrekord, Iran , , Hoseini-Teshnizi، , Jafar نويسنده Department of Electrical Engineering, IAU NajafAbad Branch , , Amini، GholamReza نويسنده Faculty of Engineering, Shahrekord University ,
Issue Information
فصلنامه با شماره پیاپی 24 سال 2013
Pages
4
From page
65
To page
68
Abstract
Silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried
insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g. SiO2 is added
on top of the buried insulator and partially covers the diamond. The second insulating material has lower electrical
permittivity. Therefore, the fringing field capacitance is smaller. Simulation results of 22 nm silicon-on-diamond
transistor shows 18% improvement in DIBL comparing with conventional SOD structure. Lattice temperature increase
of 5% is observed in the new structure compared with the conventional SOD.
Journal title
Majlesi Journal of Electrical Engineering
Serial Year
2013
Journal title
Majlesi Journal of Electrical Engineering
Record number
1602102
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