Title of article
Numerical simulation of hydrogen atom transport in thick nickel membrane using semi-empirical quantum model
Author/Authors
Chen، نويسنده , , Bin-Hao and Chuang، نويسنده , , Chin-Ho and Ahluwalia، نويسنده , , Rajesh K. and Chang، نويسنده , , Mu-Li، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
8
From page
9824
To page
9831
Abstract
The transport characteristics of hydrogen atoms are of significant interest within the energy industry. In this study, molecular dynamics (MD) simulations based on a semi-empirical quantum model are performed to examine the diffusion of hydrogen in a dense nickel membrane. The mean square displacement (MSD) and diffusion coefficients of the nickel and hydrogen atoms are derived at various temperatures in the range of 300–1800 K. The numerical results reveal the changes which take place in the transportation mechanism of the hydrogen atoms as a result of a temperature-induced variation in the lattice structure. It is shown that the transport of the hydrogen atoms changes from an interstitial diffusion mechanism at temperatures lower than 1200 K to a vacancy diffusion mechanism at temperatures of 1600–1800 K as result of a change in the nickel lattice from an ordered FCC structure to an amorphous-type structure.
Keywords
Molecular dynamics , Diffusion in solids , Hydrogen storage , Hydrogen atom transport
Journal title
International Journal of Hydrogen Energy
Serial Year
2009
Journal title
International Journal of Hydrogen Energy
Record number
1658739
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