• Title of article

    Second harmonic generation at the GaAs(1 1 1)-B|solution interface

  • Author/Authors

    Lazarescu، نويسنده , , V. and Lazarescu، نويسنده , , M.F. and Jones، نويسنده , , H. and Schmickler، نويسنده , , W.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    5
  • From page
    257
  • To page
    261
  • Abstract
    Second harmonic generation from the interface between GaAs(1 1 1)-B and an aqueous electrolyte has been investigated at a long wavelength (1064 nm) and at two shorter ones (865 and 815 nm). The signal showed the symmetry of the crystal; the isotropic amplitude was found to vary substantially with the electrode potential, indicating that a major part of the signal is generated near the interface. The potential dependence was stronger at shorter wavelengths. Impedance spectroscopy revealed the existence of surface states, which may affect the magnitude of the signal.
  • Keywords
    second harmonic generation , Impedence spectroscopy , Surface states , Gallium arsenide
  • Journal title
    Journal of Electroanalytical Chemistry
  • Serial Year
    2004
  • Journal title
    Journal of Electroanalytical Chemistry
  • Record number

    1670352