Optimized sub-40 nm planar patterning process for a La0.7Sr0.3MnO3 magnetic memory

We report on the optimization of the single-step nanolithography planar process that allows generation of the core-element of a spin-polarized magnetic memory in La0.7Sr0.3MnO3 (LSMO). Taking advantage of the proximity effects due to backscattered electrons, a conventional electron-beam patterning process at 30 keV has been optimized to generate sub-50 nm-wide nanokinks in the magnetic microbridge. The best layout for the nanokinks, the electron beam patterning parameters and the results of the ion beam etching (IBE) for transferring these nanopatterns in the magnetic oxide are reported.