Title of article
Photoelectron diffraction study of the Si 2p surface-core-level-shift of the Si(0 0 1)(1×2)-Sb surface
Author/Authors
Shimomura، نويسنده , , M and Abukawa، نويسنده , , T and Yoshimura، نويسنده , , K and Oh، نويسنده , , J.H and Yeom، نويسنده , , H.W and Kono، نويسنده , , S، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
6
From page
23
To page
28
Abstract
Structural parameters of the Si(0 0 1)(1×2)-Sb surface were optimized by photoelectron diffraction (PED) of Sb 4d peaks. The optimized parameters are 3.17±0.1 إ for Sb-dimer bond length and 1.78±0.1 إ for the layer spacing between Sb and the first layer Si. The main origin of a surface-core-level-shifted (SCLS) component in Si 2p core-level spectra is identified by SCLS-PED to be the first layer Si atoms connected to Sb dimers. Another SCLS component reported previously was not observed, which indicates that this SCLS component is related to some defects on the (1×2)-Sb surface.
Keywords
and topography , Surface relaxation and reconstruction , Silicon , Photoelectron diffraction , surface structure , Roughness , morphology , Antimony
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1678116
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