Title of article
Scanning tunneling microscopy images of the atoms in the corner holes on the Si(111)-(7×7) surface with bismuth-covered tips
Author/Authors
Bulavenko، نويسنده , , S.Yu. and Melnik، نويسنده , , P.V. and Nakhodkin، نويسنده , , M.G.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
6
From page
127
To page
132
Abstract
The use of special tips in scanning tunneling microscopy experiments for studying the Si(111)-(7×7) surface is considered. The special tips are created by bismuth deposition on tungsten tips. Images of the atoms in the corner holes are obtained for the first time and the unartificial nature of the images has been checked by the adsorption of a low amount of atomic hydrogen on the Si(111)-(7×7) surface.
Keywords
Silicon , Bismuth , Scanning tunneling microscopy , Semiconducting surfaces
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1679699
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