The electronic and optical properties of Si/SiO2 superlattices: role of confined and defect states

The Si layer thickness dependence of the optical properties of silicon/silicon dioxide (Si/SiO2) superlattices has been, for the first time, theoretically investigated. In our first principle calculation we consider both fully passivated interfaces and the presence of oxygen vacancy at the interface. Our results show the key role played both by the quantum confined states and interface states in the experimentally observed visible luminescence in Si/SiO2 confined systems.