Title of article
Elastic relaxation during 2D epitaxial growth: a study of in-plane lattice spacing oscillations
Author/Authors
Müller، نويسنده , , P. and Turban، نويسنده , , P. and Lapena، نويسنده , , L. and Andrieu، نويسنده , , S.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
21
From page
52
To page
72
Abstract
The purpose of this paper is to report some new experimental and theoretical results about the analysis of in-plane lattice spacing oscillations during two-dimensional (2D) homo and hetero epitaxial growth. The physical origin of these oscillations comes from the finite size of the strained islands. The 2D islands may thus relax by their edges, leading to in-plane lattice spacing oscillations during the birth and spread of these islands. On the one hand, we formulate the problem of elastic relaxation of a coherent 2D epitaxial deposits by using the concept of point forces and demonstrate that the mean deformation in the islands exhibits an oscillatory behaviour. On the other hand, we calculate the intensity diffracted by such coherently deposited 2D islands by using a mean model of a pile-up of weakly deformed layers. The amplitude of in-plane lattice spacing oscillations is found to depend linearly on the misfit and roughly linearly on the nucleation density. We show that the nucleation density may be approximated from the full-width at half maximum of the diffracted rods at half coverages. The predicted dependence of the in-plane lattice spacing oscillations amplitude with the nucleation density is thus experimentally verified on V/Fe(0 0 1), Mn/Fe(0 0 1), Ni/Fe(0 0 1), Co/Cu(0 0 1) and V/V(0 0 1).
Keywords
Growth , Molecular Beam Epitaxy , Surface stress , Reflection high-energy electron diffraction (RHEED)
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1680501
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