Title of article
Structural and electronic properties of C3N4−nPn (n=0,1,2,3,4)
Author/Authors
Ding، نويسنده , , F and Feng، نويسنده , , Y.P، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
7
From page
364
To page
370
Abstract
First principles electronic structure method based on the density functional theory and the local density approximation is used to investigate the structural and electronic properties of C3N4−nPn (n=0,1,2,3,4). It is found that the N-rich compounds energetically favor structures with sp2 bonding, while the pseudocubic structure which is characterized by sp3 bonding is preferred by the P-rich compounds. Even though C3N4 is a wide-gap semiconductor, the band gap of C3N4−nPn decreases rapidly when N is gradually substituted with P, and the P-rich compounds are predicted to be metallic or narrow-gap semiconductors.
Keywords
Carbon nitride , phosphide , Electronic property , IV–V alloy , first principles
Journal title
Computational Materials Science
Serial Year
2004
Journal title
Computational Materials Science
Record number
1680502
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