• Title of article

    Structural and electronic properties of C3N4−nPn (n=0,1,2,3,4)

  • Author/Authors

    Ding، نويسنده , , F and Feng، نويسنده , , Y.P، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    7
  • From page
    364
  • To page
    370
  • Abstract
    First principles electronic structure method based on the density functional theory and the local density approximation is used to investigate the structural and electronic properties of C3N4−nPn (n=0,1,2,3,4). It is found that the N-rich compounds energetically favor structures with sp2 bonding, while the pseudocubic structure which is characterized by sp3 bonding is preferred by the P-rich compounds. Even though C3N4 is a wide-gap semiconductor, the band gap of C3N4−nPn decreases rapidly when N is gradually substituted with P, and the P-rich compounds are predicted to be metallic or narrow-gap semiconductors.
  • Keywords
    Carbon nitride , phosphide , Electronic property , IV–V alloy , first principles
  • Journal title
    Computational Materials Science
  • Serial Year
    2004
  • Journal title
    Computational Materials Science
  • Record number

    1680502