Title of article
Atomistic study of III-nitride nanotubes
Author/Authors
Kang، نويسنده , , Jeong-Won and Hwang، نويسنده , , Ho Jung، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
10
From page
237
To page
246
Abstract
We have investigated the structures, the energetic and the nanomechanics of the single-wall boron-, aluminum- and gallium-nitride nanotubes using atomistic simulations based on the Tersoff-type potential. The Tersoff-type potential for the III-nitride materials effectively described the properties of the III-nitride nanotubes. The nanomechanics of boron-, aluminum- and gallium-nanotubes under the compressive loadings has been investigated, and Youngʹs moduli were calculated.
Keywords
aluminum- and gallium-nitride nanotubes , atomistic simulations , Tersoff-type potential , Single-wall boron-
Journal title
Computational Materials Science
Serial Year
2004
Journal title
Computational Materials Science
Record number
1680582
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