Low-energy P+ ion channeling and implantation into Si(1 1 0), SiC(1 1 0), GaP(1 1 0) and GaAs(1 1 0)

A comparative investigation of 1–5 keV P+ ions channeling in thin (ΔZ = 500 Å) and thick Si(1 1 0), SiC(1 1 0), GaP(1 1 0) and AsGa(1 1 0) crystals has been carried out by computer simulation in the binary collision approximation. The ion ranges, energy losses, angular and energy distributions, as well as depth profile distribution have been calculated. It is shown that for paraxial part of a beam the main contribution to the total energy losses comes from inelastic ones. A detailed investigation was carried out on the energy losses of ions transmitted through thin crystal and on the depth profile versus the structure and composition of single crystal. It has been established that energy and depth profile distributions depend on width of channel in the direction 〈1 1 0〉 and mass of target atoms.