• Title of article

    Kinetics of Au induced faceting of vicinal Si(1 1 1)

  • Author/Authors

    Hild، نويسنده , , R and Seifert، نويسنده , , C and Kammler، نويسنده , , M and Meyer zu Heringdorf، نويسنده , , F.-J and Horn-von-Hoegen، نويسنده , , M. and Zhachuk، نويسنده , , R.A. and Olshanetsky، نويسنده , , B.Z، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2002
  • Pages
    11
  • From page
    117
  • To page
    127
  • Abstract
    Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards [1 1 2̄] five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At Tads=800 °C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)–Au reconstruction.
  • Keywords
    Low energy electron diffraction (LEED) , Faceting , Silicon , Adsorption kinetics , Step formation and bunching , Scanning tunneling microscopy , Gold
  • Journal title
    Surface Science
  • Serial Year
    2002
  • Journal title
    Surface Science
  • Record number

    1681232