Title of article
Preparation of a Si(1 1 1):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si(1 1 1)
Author/Authors
Fritsche، نويسنده , , R. and Wisotzki، نويسنده , , E. and Thiكen، نويسنده , , A. A. S. Islam، نويسنده , , A.B.M.O. and Klein، نويسنده , , A. and Jaegermann، نويسنده , , W. and Rudolph، نويسنده , , R. and Tonti، نويسنده , , D. and Pettenkofer، نويسنده , , C.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
9
From page
296
To page
304
Abstract
A Ga–Se half-sheet van der Waals surface termination on Si(1 1 1) is prepared in a two step process involving selenization of a monolayer gallium on the surface. Substrate and film growth were investigated in situ by high-resolution synchrotron X-ray photoemission and low-energy electron diffraction. Due to repeated reorganizing of the Si surface atoms and etching of Ga by excess Se it is generally difficult to achieve a complete surface coverage by GaSe by this preparation procedure.
Keywords
Low energy electron diffraction (LEED) , Silicon , epitaxy , Photoelectron spectroscopy
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1681395
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