Title of article
Residual gas effects on high-resolution Si 2p spectra of Si(1 0 0)c(4 × 2)
Author/Authors
Yamashita، نويسنده , , Y. and Machida، نويسنده , , S. and Mukai، نويسنده , , K. and Yoshinobu، نويسنده , , J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
4
From page
467
To page
470
Abstract
We investigated Si 2p spectra for the Si(1 0 0)c(4 × 2) surfaces exposed to CO and CO2 to clarify how the adsorbed molecules affect the clean surface spectra in ultra-high vacuum (UHV). After a small amount of CO exposure (0.05 L), the spectral shape looks sharper as compared with that of the clean surface due to the reduced intensity of the down dimer peak, because CO is preferentially adsorbed on the down dimer site. Thus the adsorption of CO from the residual gas in UHV might induce a slight change in the spectral shape within a measurement period (∼103 s). On the other hand, in the case of adsorbed CO2, the spectral shape does not change but the overall intensity decreases, since CO2 is physisorbed on Si(1 0 0).
Keywords
Photoelectron spectroscopy , Carbon dioxide , Silicon , CARBON MONOXIDE
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1682049
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