Title of article
Atomic geometry and electronic states on GaAs(1 1 1)A–Se(23×23)
Author/Authors
K. Chuasiripattana *، نويسنده , , K. and Miwa، نويسنده , , R.H. and Srivastava، نويسنده , , G.P.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
7
From page
909
To page
915
Abstract
In this work we have performed a theoretical study of the atomic geometry and scanning tunelling microscopy simulation of the GaAs(1 1 1)A–Se(23×23) surface. The calculated geometry with Se trimers on H3 sites agrees well with results reported recently from STM and RHEED experiments. Simulated STM images, corresponding to orbital localisation near the fundamental gap, support the experimental observations of bright spots on Se trimers.
Keywords
Density functional calculations , Surface electronic phenomena (work function , Surface potential , Surface states , etc.) , Chalcogens , Gallium arsenide , Chemisorption
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1682216
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