Title of article
Time-evolution of the GaAs(0 0 1) pre-roughening process
Author/Authors
Ding، نويسنده , , Z and Bullock، نويسنده , , D.W and Thibado، نويسنده , , P.M and LaBella، نويسنده , , V.P and Mullen، نويسنده , , Kieran، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2003
Pages
6
From page
491
To page
496
Abstract
The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.
Keywords
Scanning tunneling microscopy , surface structure , Surface roughening , morphology , Roughness , Gallium arsenide , and topography , Surfaces defects
Journal title
Surface Science
Serial Year
2003
Journal title
Surface Science
Record number
1683671
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