• Title of article

    Cerium-induced reconstructions on the Si(1 1 1) surface

  • Author/Authors

    Goshtasbi Rad، نويسنده , , M. and Gِthelid، نويسنده , , M. and Le Lay، نويسنده , , G. Pihl Karlsson، نويسنده , , U.O.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2004
  • Pages
    8
  • From page
    49
  • To page
    56
  • Abstract
    Scanning tunnelling microscopy has been used to investigate cerium-induced reconstructions on Si(1 1 1). Room temperature deposition of submonolayers of Ce is reactive and produces an intricate two layer silicide structure: a 7×7 phase on top of a 23×23 reconstruction, co-existing with the bare Si(1 1 1)-7 × 7 surface. ing the submonolayer-covered surface at 600 °C generates a one-dimensional (5 × 2) structure comprising both Ce and Si adatoms. This structure coexists with the bare 7 × 7 and a 2 × 3 structure with cerium adatoms in alternating H3 and T4 positions.
  • Keywords
    Silicon , Cerium , Single crystal surfaces , Scanning tunneling microscopy , Surface relaxation and reconstruction
  • Journal title
    Surface Science
  • Serial Year
    2004
  • Journal title
    Surface Science
  • Record number

    1684678