Title of article
The CuGaSe2(0 0 1) surface: A (4 × 1) reconstruction
Author/Authors
Deniozou، نويسنده , , Th. and Esser، نويسنده , , N. and Siebentritt، نويسنده , , S.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
7
From page
100
To page
106
Abstract
We report on the formation of a stable (4 × 1) reconstruction of the chalcopyrite CuGaSe2(0 0 1) surface. Using Ar+ ion-bombardment and annealing of epitaxial CuGaSe2 films grown on GaAs(0 0 1) substrates it was possible to obtain flat, well-ordered surfaces showing a clear (4 × 1) reconstruction. The cleanliness and structure were analyzed in situ by AES and LEED. AES data suggest a slight Se-enrichment and Cu-depletion upon surface preparation. Our results demonstrate that (0 0 1) surfaces of the Cu–III–VI2(0 0 1) material can show stable, unfacetted surfaces.
Keywords
Step formation , morphology , surface reconstruction , surface structure , Auger electron spectroscopy (AES) , Low energy electron diffraction (LEED) , Ion bombardment , sputtering
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1685080
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