Title of article
An ab initio study of C60 adsorption on the Si(0 0 1) surface
Author/Authors
Hobbs، نويسنده , , Chris and Kantorovich، نويسنده , , Lev and Gale، نويسنده , , Julian D.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
11
From page
45
To page
55
Abstract
Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(0 0 1) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sites (over 20) are calculated within the GGA and LDA approximations, taking into account a BSSE correction due to the localised basis set used. Additional adsorption sites to those found previously are identified and analysed in detail and a hierarchy of the most stable sites is constructed. Upon the adsorption, the molecule forms strong covalent bonds with the surface dimers, whereupon the structure of nearby single and double C–C bonds of the C60 cage undergo substantial reformation. We confirm our previous result that the adsorption energies are greatly reduced within the GGA.
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1685316
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